Semiconductor Annealing

Semiconductor Annealing
The semiconductor chip needs to be annealed after ion implantation. Because when impurity ions are implanted into the semiconductor, the high-energy incident ions will collide with the atoms on the semiconductor lattice, causing some lattice atoms to be displaced, resulting in a large number of vacancies, which will make the arrangement of atoms in the implanted area disorder or become It is an amorphous region, so after ion implantation, the semiconductor must be annealed at a certain temperature to restore the crystal structure and eliminate defects. At the same time, annealing also has the function of activating the donor and acceptor impurities, that is, some impurity atoms in the interstitial position are annealed to allow them to enter the replacement position. The annealing temperature is generally 200~800C, which is much lower than the temperature of thermal diffusion doping.

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