Reaction Sintering

Reaction Sintering

Reaction sintered silicon carbide, also known as self-bonding silicon carbide, refers to the process of reacting porous billets with gas phase or liquid phase to improve billet quality, reduce pores, and sinter the finished product with a certain strength and dimensional accuracy. The α-SiC powder and graphite are mixed in a certain proportion and heated to about 1650°C to form a billet. At the same time, it penetrates or penetrates into the billet through gas-phase Si, reacts with graphite to form β-SiC, and combines with the existing α-SiC particles. When Si is completely infiltrated, a reaction sintered body with complete density and no dimensional shrinkage can be obtained. Compared with other sintering processes, the dimensional change of reactive sintering during densification is small, and products with precise dimensions can be produced, but the presence of a large amount of SiC in the sintered body makes the high temperature performance of reactive sintered SiC ceramics worse.

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